1998. 6. 15
1/6
SEMICONDUCTOR
TECHNICAL DATA
KRA101S~KRA106S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
MAXIMUM RATING (Ta=25 )
TYPE NO.
R1( )
R2(k )
KRA101S
4.7
4.7
KRA102S
10
10
KRA103S
22
22
KRA104S
47
47
KRA105S
2.2
47
KRA106S
4.7
47
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA101S 106S
V
O
-50
V
Input Voltage
KRA101S
V
I
-20, 10
V
KRA102S
-30, 10
KRA103S
-40, 10
KRA104S
-40, 10
KRA105S
-12, 5
KRA106S
-20, 5
Output Current
KRA101S 106S
I
O
-100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
BIAS RESISTOR VALUES
EQUIVALENT CIRCUIT
R1
R2
COMMON(+)
OUT
IN
TYPE
KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S
MARK
PA
PB
PC
PD
PE
PF
MARK SPEC
Type Name
Marking
Lot No.
PDF 
ZIP
